(PDF) PTB20206 Datasheet - 1.0 Watt/ 470-860 MHz RF Power Transistor

Número de pieza	PTB20206
Descripción	1.0 Watt/ 470-860 MHz RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20206 1.0 Watt, 470–860 MHz RF Power Transistor Description The 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. Class A Characteristics 1.0 Watt, 470–860 MHz -44 dBc Max Two-tone IMD at 1 W(PEP) Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 VCE = 20 V ICQ = 360 mA f = 860 MHz 0.1 0.2 Input Power (Watts) 0.3 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) 20206LOT CODE Package 20206 Symbol VCER VCBO VEBO IC PD TSTG RθJC Value 40 50 4.0 1.7 13.5 0.077 –40 to +150 13.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 9/28/98 1 1 page

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PDF PTB20206 Data sheet ( Hoja de datos )