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PDF PTB20195 Data sheet ( Hoja de datos )
| Número de pieza | PTB20195 | |
| Descripción | 150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20195
150 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20195 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
200
160
120
80
40
0
0
VCC = 26 V
ICQ = 400 mA Total
f = 900 MHz
5 10 15 20 25
Input Power (Watts)
30
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Class AB Characteristics
26 Volt, 900 MHz Characteristics
- Output Power = 150 Watts Min
- Collector Efficiency = 50% Min at 150 Watts
- Gain = 9 dB Typ
Gold Metallization
Silicon Nitride Passivated
20195LOT CODE
Package 20224
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
60
4.0
25
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PTB20195.PDF ] | |
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