(PDF) PTB20193 Datasheet - 60 Watts/ 1.8-1.9 GHz Cellular Radio RF Power Transistor

Número de pieza	PTB20193
Descripción	60 Watts/ 1.8-1.9 GHz Cellular Radio RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20193 60 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Typical Output Power vs. Input Power 70 60 50 40 30 20 10 1 VCC = 26 V ICQ = 150 mA f = 1.9 GHz 357 9 Input Power (Watts) 11 13 60 Watts, 1.8–1.9 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated 20193LOT CODE Package 20223 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70° C) Symbol VCER VCES VEBO IC PD TSTG RθJC Value 55 55 4.0 8 233 1.33 –40 to +150 0.75 Unit Vdc Vdc Vdc Adc W W/°C °C °C/W 9/28/98 1 1 page

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PDF PTB20193 Data sheet ( Hoja de datos )