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PDF PTB20189 Data sheet ( Hoja de datos )
| Número de pieza | PTB20189 | |
| Descripción | UHF TV Linear Power Transistor Cellular Radio RF Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20189
1 Watt, 900–960 MHz
Cellular Radio RF Power Transistor
Description
The 20189 is an NPN, common emitter RF power transistor intended
for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power and Efficiency vs. Input Power
2.0 80
VCC = 25 V
1.5 ICQ = 175 mA
f = 960 MHz
60
1.0 40
0.5 20
0.0
0.00
0.02 0.04 0.06 0.08
Input Power (Watts)
0
0.10
25 Volt, 900–960 MHz Characteristics
- Output Power = 1 Watt
- Gain = 12 dB Min at 1 Watt
Class A/AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
20189LOT CODE
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
0.5
11
0.063
–40 to +150
16.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PTB20189.PDF ] | |
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