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PDF PTB20175 Data sheet ( Hoja de datos )
| Número de pieza | PTB20175 | |
| Descripción | 55 Watts/ 1.9-2.0 GHz Cellular Radio RF Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20175
55 Watts, 1.9–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20175 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
55 Watts, 1.9–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 55 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
60
50
40
30 VCC = 26 V
ICQ = 0.150 A
20 f = 2 GHz
10
2
4 6 8 10 12 14
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
20175LOT CODE
Package 20223
Symbol
VCER
VCES
VEBO
IC
PD
Tstg
RθJC
Value
55
55
4
8
233
1.33
–40 to +150
.75
Unit
Vdc
Vdc
Vdc
Adc
W
W/°C
°C
°C/W
9/28/98
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet PTB20175.PDF ] | |
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