(PDF) PTB20171 Datasheet - 25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

Número de pieza	PTB20171
Descripción	25 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 935–960 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 40 30 20 10 0 0 VCC = 24 V ICQ = 150 mA f = 960 MHz 1 23 Input Power (Watts) 4 5 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) 20171LOT CODE Package 20200 Symbol VCER VCBO VEBO IC PD TSTG RθJC Value 50 50 4.0 5.0 145 0.833 –40 to +150 1.2 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 9/28/98 1 1 page

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PDF PTB20171 Data sheet ( Hoja de datos )