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PDF PTB20170 Data sheet ( Hoja de datos )
| Número de pieza | PTB20170 | |
| Descripción | 30 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20170
30 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20170 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
30 Watts, 1.8–2.0 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
40
35
30
25
20
15 VCC = 26 V
10 ICQ = 100 mA
5 f = 2.0 GHz
0
01 2345 6
Input Power (Watts)
7
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20170LOT CODE
Package 20209
Symbol
VCER
VCES
VEBO
IC
PD
TSTG
RθJC
Value
55
55
4.0
6.7
123
0.7
–40 to +150
1.43
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1
1 page  
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Artwork (1 inch
)
PTB 20170
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [email protected]
www.ericsson.com/rfpower
5
Specifications subject to change without notice.
L3
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20170 Uen Rev. C 09-28-98
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PTB20170.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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