(PDF) PTB20157 Datasheet - 20 Watts/ 1.35-1.85 GHz RF Power Transistor

Número de pieza	PTB20157
Descripción	20 Watts/ 1.35-1.85 GHz RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20157 20 Watts, 1.35–1.85 GHz RF Power Transistor Description The 20157 is an NPN common base RF power transistor intended for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Typical Output Power vs. Input Power 30 25 20 15 10 5 0 0 VCC = 22 V f = 1.85 GHz 1234567 Input Power (Watts) 20 Watts, 1.35–1.85 GHz Class C Characteristics 40% Min Collector Efficiency at 20 Watts Gold Metallization Silicon Nitride Passivated 20157LOT CODE Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Symbol VCER VCBO VEBO IC PD TSTG RθJC Value 50 50 4 6 75 0.43 –40 to +150 2.33 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 9/28/98 1 1 page

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PDF PTB20157 Data sheet ( Hoja de datos )