(PDF) PTB20082 Datasheet - 15 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Número de pieza	PTB20082
Descripción	15 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.5 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 20 16 12 8 VCC = 26 V ICQ = 70 mA 4 f = 2.0 GHz 0 01234 Input Power (Watts) 20082LOT CODE Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Symbol VCER VCBO VEBO IC PD TSTG RθJC Value 50 50 4.0 1.4 52 0.29 –40 to +150 3.4 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 9/28/98 1 1 page

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PDF PTB20082 Data sheet ( Hoja de datos )