(PDF) PTB20031 Datasheet - 40 Watts/ 420-470 MHz RF Power Transistor

Número de pieza	PTB20031
Descripción	40 Watts/ 420-470 MHz RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20031 40 Watts, 420–470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Typical Output Power vs. Input Power 60 50 40 30 20 10 0 0 VCC = 24 V ICQ = 200 mA f = 470 MHz 246 Input Power (Watts) 8 10 40 Watts, 420–470 MHz Class AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated 20031LOT CODE Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Symbol VCER VCBO VEBO IC PD TSTG RθJC Value 40 50 4.0 10.0 175 1.0 –40 to +150 1.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 9/23/98 1 1 page

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PDF PTB20031 Data sheet ( Hoja de datos )