(PDF) PTB20030 Datasheet - 15 Watts/ 420-470 MHz RF Power Transistor

Número de pieza	PTB20030
Descripción	15 Watts/ 420-470 MHz RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 420–470 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 25 20 15 10 5 0 0.0 VCC = 24 V ICQ = 200 mA f = 470 MHz 0.5 1.0 1.5 Input Power (Watts) 2.0 20030LOT CODE Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Symbol VCER VCBO VEBO IC PD TSTG RθJC Value 48 50 4.0 6.0 63 0.30 –40 to +150 2.8 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 9/28/98 1 1 page

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PDF PTB20030 Data sheet ( Hoja de datos )