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Datasheet R6091 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | R6091 | PHOTOMULTlPLlER TUBE PHOTOMULTlPLlER TUBE
R6091
For Scintillation Counting, Fast Time Response 76mm(3 Inch) Diameter, Bialkali Photocathode, 12–Stage Head–On Type
GENERAL
Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area MateriaI Window Shape Structure Dynode Nu | Hamamatsu Corporation | data |
R60 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | R600 | General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) Powerex Power Semiconductors rectifier | | |
2 | R6000F | 0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts MCC
Features
• • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST
R3500F THRU R6000F
0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts
DO-15
Maximum DC Blocking Voltage
D
• •
Maximum Ratings
Operating Temperature -55 °C to + Micro Commercial Components rectifier | | |
3 | R6004CND | 10V Drive Nch MOSFET Data Sheet
10V Drive Nch MOSFET
R6004CND
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63) ROHM Semiconductor mosfet | | |
4 | R6004END | Nch 600V 4A Power MOSFET R6004END
Nch 600V 4A Power MOSFET
Datasheet
VDSS
600V
lOutline
TO-252
RDS(on)(Max.)
0.98Ω
SC-63
ID
±4.0A
CPT3
PD
lFeatures
58W
lInner circuit
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be � ROHM Semiconductor mosfet | | |
5 | R6004ENX | Nch 600V 4A Power MOSFET R6004ENX
Nch 600V 4A Power MOSFET
Data Sheet
VDSS RDS(on) (Max.)
ID PD
lFeatures 1) Low on-resistance.
600V 980mW
4A 40W
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. 5) Parallel us ROHM Semiconductor mosfet | | |
6 | R6004KND | Nch 600V 4A Power MOSFET R6004KND
Nch 600V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.98Ω ±4.0A 58W
lFeatures
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant.
lOutline
TO-252
SC-63
CPT3
lInner circuit
Datas ROHM Semiconductor mosfet | | |
7 | R6004KNJ | Nch 600V 4A Power MOSFET R6004KNJ
Nch 600V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.98Ω ±4.0A 58W
lFeatures
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant
lOutline
TO-263
SC-83
LPT(S)
lInner circuit
Data ROHM Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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