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RF3320 の電気的特性と機能

RF3320のメーカーはRF Micro Devicesです、この部品の機能は「CABLE REVERSE PATH PROGRAMMABLE GAIN AMPLIFIER」です。


製品の詳細 ( Datasheet PDF )

部品番号 RF3320
部品説明 CABLE REVERSE PATH PROGRAMMABLE GAIN AMPLIFIER
メーカ RF Micro Devices
ロゴ RF Micro Devices ロゴ 




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RF3320 Datasheet, RF3320 PDF,ピン配置, 機能
Preliminary
3
Typical Applications
• Euro-DOCSIS/DOCSIS Cable Modems
• CATV Set-Top Boxes
• Telephony Over Cable
RF3320
CABLE REVERSE PATH
PROGRAMMABLE GAIN AMPLIFIER
• Home Networks
• Automotive/Mobile Multimedia
• Coaxial and Twisted Pair Line Driver
3
Product Description
The RF3320 is a variable gain amplifier for use in CATV
3.90
+ 0.10
reverse path (upstream) applications. It is DOCSIS-com-
pliant for use in cable modems. The gain control covers a
58dB range and is serially programmable via three-wire
4.90
+ 0.20
digital bus for compatibility with standard baseband
chipsets. Amplifier shutdown and transmit disable modes
are software- and hardware-controlled. The device is
placed into software-shutdown mode via the serial control
6.00
+ 0.20
bus. The device operates over the frequency band of
5MHz to 65MHz for use in current U.S. and European
8° MAX
0° MIN
systems. The amplifier delivers up to 60dBmV at the out-
put of the balun. Gain is controllable in accurate 1dB
steps. The device is provided in a thermally enhanced,
0.60
+ 0.15
exposed die flag package.
0.25
+ 0.05
0.65
1.40
+ 0.10
-A- 0.05
+ 0.05
Note 3
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with
respect to datum "A".
3. Lead standoff is specified from
the lowest point on the package
underside.
EXPOSED DIE
FLAG
0.24
0.20
3.302
2.286
Optimum Technology Matching® Applied
Si BJT
üSi Bi-CMOS
GaAs HBT
SiGe HBT
GaAs MESFET
Si CMOS
SHDNB 1
TX EN 2
NC 3
VIN 4
VINB 5
VCC 6
VCC 7
RAMP 8
Power
Control
Gain Control
and Serial Bus
16 GND
15 NC
14 NC
13 VOUT
12 VOUTB
11 SDA
10 CS
9 SCLK
Package Style: SSOP-16 EDF Slug
Features
• Single 5V Supply
• Differential Input and Output
• -30dB to +28dB Voltage Gain Range
• 5MHz to 65MHz Operation
• Sophisticated Power Management
• DOCSIS 1.1 RF Compliant
Ordering Information
RF3320
Cable Reverse Path Programmable Gain Amplifier
RF3320 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A10 010514
3-27

1 Page





RF3320 pdf, ピン配列
Preliminary
RF3320
Parameter
AC Specifications, cont’d
Output Step Size
Isolation in Transmit Disable
Mode
Output Noise
Maximum Gain
Minimum Gain
Transmit Disabled
TX EN Enable Time
TX EN Transient Duration
Output Switching Transients
Output Impedance
Input Impedance
Thermal
ThetaJC
Specification
Min.
Typ.
Max.
0.8 1.0 1.1
-80 -95
-37 -30
-55 -50
-75 -70
0.5 1.0
2.4 3.0
5 10
35
255 300 345
75
28
Unit Condition
dB
dBc Maximum Gain, 20MHz
dBmV/
160 kHz
dBmV/
160 kHz
dBmV/
160 kHz
µS
µS
mVP-P
mVP-P
-96dBc for a 59dBmV carrier in a 160kHz
bandwidth.
-64dBc for an 8dBmV carrier in a 160kHz
bandwidth.
TXEN =0
Time for gain to reach 99% of final value.
See Note 1.
See Note 1.
Maximum Gain
Minimum Gain
Chip output impedance is nominally 300.
Differential to single-ended output conver-
sion to 75is performed in a balun with a
2:1 turns ratio, corresponding to a 4:1 imped-
ance ratio.
Differential
°C/W
Note 1: The enable time is determined by the value of the capacitor on pin 8 (RAMP). A higher capacitor value will
increase the enable time, but will reduce the transient voltage.
3
Rev A10 010514
3-29


3Pages


RF3320 電子部品, 半導体
RF3320
Preliminary
Typical Application Schematic
SHDNB
1
16
TXEN
2
Power
Control
15
VCC2
3
10 nF
VIN 4
3 10 nF
VINB
5
14
4:1
13 VOUT
12
VCC1
100 pF
6 11
7
Gain Control
and Serial Bus
10
SDA
220 pF
8
PACKAGE BASE
9
CS
SCLK
3-32
Rev A10 010514

6 Page



ページ 合計 : 18 ページ
 
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Link :


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