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PDF RLP1N08LE Data sheet ( Hoja de datos )
| Número de pieza | RLP1N08LE | |
| Descripción | 1A/ 80V/ 0.750 Ohm/ Current Limited/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
RLP1N08LE
April 1999 File Number 2252.3
1A, 80V, 0.750 Ohm, Current Limited,
N-Channel Power MOSFET
The RLP1N08LE is a semi-smart monolithic power circuit
which incorporates a lateral bipolar transistor, two resistors,
a zener diode, and a PowerMOS transistor. Good control of
the current limiting levels allows use of these devices where
a shorted load condition may be encountered. “Logic level”
gates allow this device to be fully biased on with only 5V
from gate to source. The zener diode provides ESD
protection up to 2kV. These devices can be produced on the
standard PowerMOS production line.
Formerly developmental type TA09842.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLP1N08LE
TO-220AB
L1N08LE
NOTE: When ordering, use the entire part number.
Features
• 1A, 80V
• rDS(ON) = 0.750Ω
• ILIMIT at 150oC = 1.5A Maximum
• Built-in Current Limiting
• ESD Protected
• Controlled Switching Limits EMI and RFI
• Specified for 150oC Operation
• Temperature Compensated Spice Model Provided
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
S
6-435
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
RLP1N08LE
Typical Performance Curves Unless Otherwise Specified (Continued)
80
MAX PULSE WIDTH = 100ms
TJ = 150oC
ILIM = 1.5A
60 RθJC = 4.17oC/W
5%
40
DUTY CYCLE = 20%
10%
2% 1%
20
50%
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
NOTE: Heatsink thermal resistance = 5oC/W
FIGURE 13. MAXIMUM VDS vs TA IN CURRENT LIMITING
80
MAX PULSE WIDTH = 100ms
TJ = 150oC
ILIM = 1.5A
60 RθJC = 4.17oC/W
1%
DUTY CYCLE = 2%
40 5%
20
0
25
10%
20%
50%
50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
NOTE: Heatsink thermal resistance = 25oC/W
FIGURE 15. MAXIMUM VDS vs TA IN CURRENT LIMITING
10 RθJC =
4.17oC/W
8
125oC 100oC 75oC
STARTING
50oC TEMP = 25oC
6
4
80
MAX PULSE WIDTH = 100ms
TJ = 150oC
ILIM = 1.5A
60 RθJC = 4.17oC/W
5%
10%
40
2% 1%
DUTY CYCLE = 20%
20
50%
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
NOTE: Heatsink thermal resistance = 10oC/W
FIGURE 14. MAXIMUM VDS vs TA IN CURRENT LIMITING
80
DUTY CYCLE = 1%
60
MAX PULSE WIDTH = 100ms
TJ = 150oC
ILIM = 1.5A
RθJC = 4.17oC/W
40 2%
10%
20%
20 50%
5%
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
NOTE: No external heatsink.
FIGURE 16. MAXIMUM VDS vs TA IN CURRENT LIMITING
10 RθJC = 4.17oC/W
8
STARTING
TEMP = 25oC
6
125oC 100oC 75oC 50oC
4
22
0
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Heatsink thermal resistance = 2oC/W
Heatsink thermal capacitance = 4j/oC
FIGURE 17. TIME TO 150oC IN CURRENT LIMITING
6-439
0
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Heatsink thermal resistance = 5oC/W
Heatsink thermal capacitance = 2j/oC
FIGURE 18. TIME TO 150oC IN CURRENT LIMITING
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RLP1N08LE.PDF ] | |
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