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PDF TGS8250-SCC Data sheet ( Hoja de datos )

Número de pieza TGS8250-SCC
Descripción SPDT FET Switch
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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Product Data Sheet
SPDT FET Switch
TGS8250-SCC
Key Features and Performance
• DC to 18 GHz Frequency Range
• 2 dB Typical Insertion Loss
• 39 dB Typical Isolation Across Band
• 2 ns Rise/Fall Time
• 50 uA Typical Current Consumption with
Control Voltage of -7 V, 0 V
• 1.8034 x 1.2700 x 0.1016 mm (0.071 x
0.050 x 0.004 in.)
Description
The TriQuint TGS8250-SCC is a GaAs single-pole, double-throw (SPDT) FET
monolithic switch designed to operate over the DC to 18 GHz frequency range.
This switch not only maintains a high isolation loss and a low insertion loss across a
wide bandwidth, but also has very low power consumption and
attains a rise/fall time of less than 2 ns. These advantages, along with the small size
of the chip, make the TGS8250-SCC ideal for use in high-speed
radar and communication applications.
Bond pad and backside metallization are gold plated for compatibility with eutectic
alloy attachment methods as well as the thermocompression and thermosonic wire
bonding processes.
The TGS8250-SCC is supplied in chip form and is engineered for high-volume
automated assembly.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TGS8250-SCC pdf
TYPICAL S-PARAMETERS
Isolation Path
Product Data Sheet
TGS8250-SCC
Fre q u e n c y
(GHz)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
S 11
MAG ANG(°)
0.15
1
0.15
-1
0.16
-1
0.17
-4
0.18
-7
0.19 - 12
0.20 - 17
0.21 - 23
0.22 - 31
0.23 - 38
0.24 - 45
0.25 - 54
0.27 - 64
0.27 - 74
0.27 - 84
0.28 - 92
0.29 - 102
0.30 - 112
0.30 - 123
0.29 - 132
0.30 - 140
0.31 - 150
0.31 - 160
0.31 - 170
0.31 - 179
0.31 171
0.31 161
0.31 150
0.30 141
0.30 131
0.29 121
0.29 111
0.28 101
0.26
90
0.24
81
0.22
73
0.20
62
0.15
46
0.08
23
0.06 - 135
0.17 166
S 21
MAG ANG(°)
0.001 92
0.002 89
0.004 89
0.005 87
0.006 85
0.007 84
0.009 83
0.010 82
0.011 80
0.012 78
0.013 76
0.014 73
0.015 71
0.017 66
0.016 60
0.016 58
0.016 55
0.016 50
0.016 47
0.016 41
0.015 39
0.015 31
0.014 23
0.014 18
0.013 11
0.013
4
0.013 - 6
0.012 - 17
0.011 - 25
0.010 - 31
0.009 - 32
0.010 - 30
0.011 - 36
0.011 - 40
0.013 - 43
0.011 - 103
0.007 - 29
0.007 - 26
0.006 47
0.024 13
0.033 - 18
S 12
MAG ANG(°)
0.001 92
0.002 89
0.004 89
0.005 88
0.006 86
0.007 84
0.009 84
0.010 82
0.011 81
0.012 78
0.013 77
0.014 74
0.015 72
0.016 67
0.016 62
0.016 60
0.017 56
0.016 51
0.016 48
0.016 44
0.015 41
0.015 32
0.015 24
0.014 19
0.013 13
0.013
5
0.013 - 4
0.012 - 14
0.011 - 23
0.010 - 29
0.009 - 30
0.010 - 28
0.011 - 34
0.012 - 37
0.013 - 42
0.011 - 101
0.007 - 26
0.007 - 22
0.006 49
0.024 15
0.033 - 15
S 22
MAG ANG(°)
0.74 175
0.74 170
0.74 165
0.73 160
0.73 155
0.73 150
0.73 146
0.73 141
0.72 136
0.72 132
0.72 128
0.71 124
0.70 120
0.70 117
0.71 114
0.72 110
0.71 105
0.69 102
0.69 101
0.70
99
0.71
95
0.70
92
0.69
90
0.69
89
0.69
87
0.70
84
0.70
83
0.70
82
0.72
81
0.73
78
0.71
76
0.70
76
0.70
76
0.72
76
0.73
73
0.71
74
0.74
72
0.77
70
0.78
64
0.75
61
0.73
58
Is olation
(d B)
58.4
52.0
48.6
45.9
44.2
42.5
41.3
40.2
39.2
38.3
37.7
37.1
36.5
35.7
36.0
35.8
35.7
35.8
35.9
36.0
36.3
36.3
36.8
37.2
37.7
37.9
37.9
38.5
39.2
39.8
40.7
39.9
39.0
38.8
37.5
38.9
43.1
42.7
44.2
32.5
29.7
TA = 250C
Reference planes for S-parameter data include bond wires as specified in the “Recommended
Assembly Diagram”. The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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