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TIP106 の電気的特性と機能

TIP106のメーカーはMotorola Semiconductorsです、この部品の機能は「DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS」です。


製品の詳細 ( Datasheet PDF )

部品番号 TIP106
部品説明 DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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TIP106 Datasheet, TIP106 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP100/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105
VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106
VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMonolithic Construction with Built–in Base–Emitter Shunt Resistors
TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
TIP100, TIP101, TIP102,
Symbol TIP105 TIP106 TIP107
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
VCEO
VCB
VEB
IC
60
60
80 100
80 100
5.0
8.0
15
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
IB
PD
1.0
80
0.64
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive Load Energy (1)
E
30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
PD
2.0
0.016
Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
RθJA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 .
1.56
62.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
mJ
Watts
W/_C
_C
Unit
_C/W
_C/W
TA TC
4.0 80
NPN
TIP100
TIP101*
TIP102*
PNP
TIP105
TIP106*
TIP107*
*Motorola Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
TC
1.0 20
TA
00
0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

1 Page





TIP106 pdf, ピン配列
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05 0.02
0.03
0.02 0.01
0.01
0.01 0.02
SINGLE PULSE
0.05 0.1
0.2
TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
ZθJC(t) = r(t) RθJC
P(pk)
RθJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0
2.0 5.0
t, TIME (ms)
10
20
Figure 4. Thermal Response
50 100 200
500 1.0 k
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
5 ms
100 µs
TJ = 150°C
1 ms dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
2.0 5.0 10 20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
2.0 5.0 10 20
50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 6. Small–Signal Current Gain
300
TJ = 25°C
200
100
70
50
30
0.1 0.2
Cob
Cib
PNP
NPN
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
Motorola Bipolar Power Transistor Device Data
3


3Pages


TIP106 電子部品, 半導体
TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
Motorola Bipolar Power Transistor Device Data
*TIP100/TDIP10*0/D

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共有リンク

Link :


部品番号部品説明メーカ
TIP100

Monolithic Construction

SemiHow
SemiHow
TIP100

Darlington NPN Power Transistors

TAITRON
TAITRON
TIP100

POWER TRANSISTORS(8A/60-100V/80W)

Mospec Semiconductor
Mospec Semiconductor
TIP100

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Motorola Semiconductors
Motorola Semiconductors


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