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TIP106 の電気的特性と機能

TIP106のメーカーはFairchild Semiconductorです、この部品の機能は「PNP Epitaxial Silicon Darlington Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 TIP106
部品説明 PNP Epitaxial Silicon Darlington Transistor
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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TIP106 Datasheet, TIP106 PDF,ピン配置, 機能
TIP105/TIP106/TIP107
PNP Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP100/101/102
Equivalent Circuit
C
B
1 TO-220
1.Base 2.Collector 3.Emitter
R1
R1 @ 10kW
R2 @ 0.6kW
R2
E
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage
: TIP105
: TIP106
: TIP107
Collector-Emitter Voltage : TIP105
: TIP106
: TIP107
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
- 60
- 80
- 100
- 60
- 80
- 100
-5
-8
- 15
-1
2
80
150
- 65 ~ 150
October 2008
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
© 2007 Fairchild Semiconductor Corporation
TIP105/TIP106/TIP107 Rev. 1.0.0
1
www.fairchildsemi.com

1 Page





TIP106 pdf, ピン配列
Typical Characteristics
-5
IB = -1000mA
-4 IB = -900mA
-3
IB = -800mA
IB = -700mA
IB = -600mA
IB = -500mA
IB = -400mA
-2
IB = -300mA
-1
IB = -200mA
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-100k
-10k
IC = 500 IB
VBE(sat)
-1k
VCE(sat)
-100
-0.1
-1 -10
IC[A], COLLECTOR CURRENT
-100
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
1ms
-10
DC
-1
-0.1
-0.01
-0.1
TIP105
TIP106
TIP107
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
10k
VCE = -4V
1k
100
-0.1
-1
Ic[A], COLLECTOR CURRENT
Figure 2. DC current Gain
-10
10k
f = 0.1 MHz
IE = 0
1k
100
10
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
© 2007 Fairchild Semiconductor Corporation
TIP105/TIP106/TIP107 Rev. 1.0.0
3
www.fairchildsemi.com


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共有リンク

Link :


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Mospec Semiconductor
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TIP100

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

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