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TLP200G-1のメーカーはSTMicroelectronicsです、この部品の機能は「TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE」です。 |
部品番号 | TLP200G-1 |
| |
部品説明 | TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとTLP200G-1ダウンロード(pdfファイル)リンクがあります。 Total 14 pages
®
Application Specific Discretes
A.S.D.™
TLPxxM/G/G-1
TRIPOLAR OVERVOLTAGE
PROTECTION for TELECOM LINE
MAIN APPLICATIONS
Any sensitive telecom equipment requiring protec-
tion against lightning :
Analog and ISDN line cards
Main Distribution Frames
Terminal and transmission equipment
Gas-tube replacement
GND
TIP
TIP
TIP
TIP
TIP
PowerSO-10TM TLPxxM
RING
RING
RING
RING
RING
DESCRIPTION
The TLPxxM/G/G-1 series are tripolar transient
surge arrestors used for primary and secondary
protectionin sensitive telecom equipment.
FEATURES
TRIPOLAR CROWBAR PROTECTION
VOLTAGE RANGE SELECTED FOR
TELECOM APPLICATIONS
REPETITIVE PEAK PULSE CURRENT :
IPP = 100 A (10 / 1000 µs)
HOLDING CURRENT : IH = 150 mA
LOW CAPACITANCE : C = 110 pF typ.
LOW LEAKAGE CURRENT : IR = 5 µA max
BENEFITS
No ageing and no noise.
If destroyed, the TLPxxM/G/G-1 falls into short
circuit, still ensuring protection.
Access to Surface Mount applications thanks to
the PowerSO-10TM and D2PAK package.
GND
TAB
GND
TIP
D2PAK TLPxxG
RING
GND
TAB
TIP GND RING
I2PAK TLPxxG-1
TM: ASD and PowerSO-10 are trademarks of ST Microelectronics.
September 1998 - Ed : 3C
1/14
1 Page TYPICAL APPLICATION
ISDN: U interface protection
TLPxxM/G/G-1
1/2 DA108S1
Power
Feeder
R3
R4
R5
TLPxxM/G/G-1
Internal
circuitry
PARAMETER MEASUREMENT INFORMATION
Symbol
IPP
ITSM
IR
IRM
IH
VBR
VR
VRM
VBO
C
Description
Peak pulse current
Maximum peak on-state current
Leakage current
Leakage current
Holding current
Breakdown voltage
Continuous reverse voltage
Maximum stand-off voltage
Breakover voltage
Capacitance
IPP
IH
IR
IRM
VRM VR VBO
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
IPP
ITSM
Tstg
Tj
TL
TOP
Parameter
Peak pulse current (longitudinal & transversal mode) :
10/1000 µs (open circuit voltage waveform 1 kV 10/1000 µs)
8/20 µs (open circuit voltage waveform 4 kV 1.2/50 µs)
2/10 µs (open circuit voltage waveform 2.5kV 2/10 µs)
Mains power induction
VRMS = 300V, R = 600Ω
t = 200ms
Mains power contact
VRMS = 220V, R = 10Ω (Fail-Safe threshold)
t = 200 ms
VRMS = 220V, R = 600Ω
t = 15 mn
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10 s
Operating temperature range
Value
100
250
500
0.7
Unit
A
A
A
A
31
0.42
- 55 to + 150
150
260
- 40 to + 85
A
A
°C
°C
°C
°C
3/14
3Pages TLPxxM/G/G-1
Fig. 1: Maximum peak on-state current versus
pulse duration.
ITSM(A)
100
90
TIP or RING
F=50Hz
80
vs GND
Tj initial=25°C
70
60
50
40
30
20
10
0
0.01
0.1
t(s)
1 10
100 1000
Fig. 3-1 :junction capacitance versus applied re-
verse voltage (typical values) (TLP140M/G/G-1).
C(pF)
200
100
LINE+ / GND-
F=1MHz
Vosc=1VRMS
Tj=25°C
50 LINE / LINE
LINE- / GND+
20
VR(V)
10
1 10 100 200
Fig. 2: Relative variation of IH versus Tamb.
IH (Tamb) / IH (25°C)
2
1.8
1.6
1.4
1.2
1
0.8
0.6 Tamb (°C)
0.4
-40 -20 0 20 40 60 80
Fig. 3-2 :junction capacitance versus applied re-
verse voltage (typical values) (TLP200M/G/G-1).
C(pF)
200
100
LINE+ / GND-
F=1MHz
Vosc=1VRMS
Tj=25°C
50
20
10
1
LINE / LINE
LINE- / GND+
VR(V)
10
100 200
Fig. 3-3 :junction capacitance versus applied re-
verse voltage (typical values) (TLP270M/G/G-1).
C(pF)
200
100
50 LINE / LINE
20
10
1
F=1MHz
Vosc=1VRMS
Tj=25°C
LINE+ / GND-
LINE- / GND+
VR(V)
10
100 300
Fig. 4: Test diagram for breakover voltage
measurement.
10 / 1000 µs
100 A
surge generator
VBO
TIP RING
TIP
GND
VBO
TIP - GND
RING
6/14
6 Page | |||
ページ | 合計 : 14 ページ | ||
|
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部品番号 | 部品説明 | メーカ |
TLP200G-1 | TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE | STMicroelectronics |