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TM25DZ-2H の電気的特性と機能

TM25DZ-2HのメーカーはMitsubishi Electric Semiconductorです、この部品の機能は「HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE」です。


製品の詳細 ( Datasheet PDF )

部品番号 TM25DZ-2H
部品説明 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
メーカ Mitsubishi Electric Semiconductor
ロゴ Mitsubishi Electric Semiconductor ロゴ 




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TM25DZ-2H Datasheet, TM25DZ-2H PDF,ピン配置, 機能
TM25DZ/CZ-24,-2H
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
IT (AV) Average on-state current ............ 25A
VRRM Repetitive peak reverse voltage
........ 1200/1600V
VDRM Repetitive peak off-state voltage
......... 1200/1600V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
K2 G2
K1 G1
16.5 23 23 3–M5
LABEL
Tab # 110,
t=0.5
(DZ)
A1K2 CR1 K1
K2 G2
A2
CR2
K1 G1
(CZ)
A1 CR1
K1K2
K2 G2
A2
CR2 K1 G1
Feb.1999

1 Page





TM25DZ-2H pdf, ピン配列
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10 3
7
5
Tj=125°C
3
2
10 2
7
5
3
2
10 1
7
5
3
2
10 0
0.5
1.0
1.5
2.0
ON-STATE VOLTAGE (V)
2.5
GATE CHARACTERISTICS
4
3
2 VFGM=10V
10 1
7
5 VGT=3.0V
PGM=5.0W
3
2
PG(AV)=
0.50W
10 0
IGT=
50mA
7
5 Tj=
3 25°C
2
10 –1
VGD=0.25V
7
5
410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4
GATE CURRENT (mA)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
50 (SINGLE PHASE HALFWAVE)
θ
40 360°
RESISTIVE,
30
INDUCTIVE
LOAD
180°
120°
90°
60°
θ=30°
20
10
PER SINGLE
ELEMENT
0
0 5 10 15 20 25
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
500
400
300
200
100
0
1 2 3 5 7 10 20 30 50 70100
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 710 1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10 –3 2 3 5 710 –22 3 5 7 10 –12 3 5 7 10 0
TIME (s)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
130
PER SINGLE
ELEMENT
120
θ
360°
RESISTIVE,
110
INDUCTIVE
LOAD
100
90
θ=30° 60° 90° 120° 180°
80
0 5 10 15 20 25
AVERAGE ON-STATE CURRENT (A)
Feb.1999


3Pages





ページ 合計 : 4 ページ
 
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[ TM25DZ-2H データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
TM25DZ-24

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
TM25DZ-2H

HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor


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