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TM25DZ-2HのメーカーはMitsubishi Electric Semiconductorです、この部品の機能は「HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE」です。 |
部品番号 | TM25DZ-2H |
| |
部品説明 | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | ||
メーカ | Mitsubishi Electric Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとTM25DZ-2Hダウンロード(pdfファイル)リンクがあります。 Total 4 pages
TM25DZ/CZ-24,-2H
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current ............ 25A
• VRRM Repetitive peak reverse voltage
........ 1200/1600V
• VDRM Repetitive peak off-state voltage
......... 1200/1600V
• DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
K2 G2
K1 G1
16.5 23 23 3–M5
LABEL
Tab # 110,
t=0.5
(DZ)
A1K2 CR1 K1
K2 G2
A2
CR2
K1 G1
(CZ)
A1 CR1
K1K2
K2 G2
A2
CR2 K1 G1
Feb.1999
1 Page PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10 3
7
5
Tj=125°C
3
2
10 2
7
5
3
2
10 1
7
5
3
2
10 0
0.5
1.0
1.5
2.0
ON-STATE VOLTAGE (V)
2.5
GATE CHARACTERISTICS
4
3
2 VFGM=10V
10 1
7
5 VGT=3.0V
PGM=5.0W
3
2
PG(AV)=
0.50W
10 0
IGT=
50mA
7
5 Tj=
3 25°C
2
10 –1
VGD=0.25V
7
5
410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4
GATE CURRENT (mA)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
50 (SINGLE PHASE HALFWAVE)
θ
40 360°
RESISTIVE,
30
INDUCTIVE
LOAD
180°
120°
90°
60°
θ=30°
20
10
PER SINGLE
ELEMENT
0
0 5 10 15 20 25
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
500
400
300
200
100
0
1 2 3 5 7 10 20 30 50 70100
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 710 1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10 –3 2 3 5 710 –22 3 5 7 10 –12 3 5 7 10 0
TIME (s)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
130
PER SINGLE
ELEMENT
120
θ
360°
RESISTIVE,
110
INDUCTIVE
LOAD
100
90
θ=30° 60° 90° 120° 180°
80
0 5 10 15 20 25
AVERAGE ON-STATE CURRENT (A)
Feb.1999
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ TM25DZ-2H データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
TM25DZ-24 | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
TM25DZ-2H | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE | Mitsubishi Electric Semiconductor |