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TPA の電気的特性と機能

TPAのメーカーはSTMicroelectronicsです、この部品の機能は「TRISIL」です。


製品の詳細 ( Datasheet PDF )

部品番号 TPA
部品説明 TRISIL
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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TPA Datasheet, TPA PDF,ピン配置, 機能
SMP50 / SMTPA / TPA
Trisil™ for telecom equipment protection
Features
Bidirectional crowbar protection
Voltage range from 62 V to 320 V
Low capacitance from 12 pF to 20 pF @ 50 V
Low leakage current : IR = 2 µA max
Holding current: IH = 150 mA min
Repetitive peak pulse current :
IPP = 50 A (10/1000 µs)
Main applications
Telecommunication equipment such as:
Analog and digital line cards (xDSL, T1/E1,
ISDN, ...)
Terminals (phone, fax, modem, ...) and central
office equipment
Description
These Trisil series have been designed to protect
telecommunication equipment against lightning
and transient induced by AC power lines.
They are available in SMA, SMB and DO-15
packages.
Benefits
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
They are used to help equipment to meet various
standards such as UL1950, IEC950 / CSA C22.2,
UL1459 and FCC part 68.
Trisils have UL94 V0 approved resin.
SMA and SMB packages are JEDEC registered
(DO-214AC and DO-214AA).
Trisils are UL497B approved (file: E136224).
SMA
SMB
(JEDEC DO-214AC) (JEDEC DO-214AA)
SMP50
SMTPA
DO-15
TPA
Order codes
Part Number
SMP50-xxx
TPAxxx
SMTPAxxx
Marking
See Ordering Information
on page 9
Schematic Diagram
TM: TRISIL is a trademark of STMicroelectronics
June 2007
Rev 3
1/11
www.st.com
11

1 Page





TPA pdf, ピン配列
SMP50 / SMTPA / TPA
Characteristics
Table 3.
Symbol
Thermal resistances
Parameter
Value
DO-15 SMA
Rth(j-a)
Junction to ambient (with recommended footprint
or with Llead = 10 mm for DO-15)
100
120
Rth(j-l) Junction to leads (Llead = 10 mm for DO-15)
60 30
Table 4.
Symbol
Electrical characteristics - definitions (Tamb = 25°C)
Parameter
VRM
VBR
VBO
IRM
IPP
IBO
IH
VR
IR
C
Stand-off voltage
Breakdown voltage
Breakover voltage
Leakage current
Peak pulse current
Breakover current
Holding current
Continuous reverse voltage
Leakage current at VR
Capacitance
SMB
Unit
100 °C/W
20 °C/W
3/11


3Pages


TPA 電子部品, 半導体
Characteristics
SMP50 / SMTPA / TPA
Figure 9. Test circuit 1 for Dynamic IBO and VBO parameters
100 V / µs, di /dt < 10 A / µs, Ipp = 50 A
2Ω
U 10 µF
45 Ω
66 Ω 470 Ω
83 Ω
0.36 nF
46 µH
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A
26 µH
250 Ω
47 Ω
46 µH
U 60 µF 12 Ω
KeyTek 'System 2' generator with PN246I module
Figure 10. Test circuit 2 for IBO and VBO parameters
K
ton = 20ms
R1 = 140Ω
220V 50Hz
Vout
R2 = 240Ω
DUT
1/4
IBO
measurement
VBO
measurement
TEST PROCEDURE
Pulse test duration (tp = 20ms):
for Bidirectional devices = Switch K is closed
for Unidirectional devices = Switch K is open
VOUT selection:
Device with VBO > 200V VOUT = 250 VRMS, R1 = 140Ω
Device with VBO 200V VOUT = 480 VRMS, R2 = 240Ω
Figure 11. Test circuit 3 for dynamic IH parameters
R
VBAT = - 48 V
D.U.T
Surge generator
6/11
This is a GO-NOGO test which allows to confirm the holding current (IH) level in a
functional test circuit.
TEST PROCEDURE
1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2/ Fire the D.U.T. with a surge current IPP = 10A, 10/1000µs.
3/ The D.U.T. will come back off-state within 50ms maximum.

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