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U9120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 U9120
部品説明 Advanced Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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U9120 Datasheet, U9120 PDF,ピン配置, 機能
Advanced Power MOSFET
SFR/U9120
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
n Lower RDS(ON) : 0.444 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
O2
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BVDSS = -100 V
RDS(on) = 0.6
ID = -4.9 A
D-PAK I-PAK
2
11
3
2
3
1. Gate 2. Drain 3. Source
Value
-100
-4.9
-3.4
-20
±30
144
-4.9
3.2
-6.5
2.5
32
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
Junction-to-Case
--
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.91
50
110
Units
oC/W
Rev. C

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U9120

Advanced Power MOSFET

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