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PDF U440 Data sheet ( 特性 )

部品番号 U440
部品説明 MONOLITHIC DUAL N-CHANNEL JFET
メーカ Linear Integrated Systems
ロゴ Linear Integrated Systems ロゴ 

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U440 Datasheet, U440 PDF,ピン配置, 機能
U/SST440,441
Linear Integrated Systems
FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441
HIGH CMRR
CMRR 85dB
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS1
IGSS 1pA
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (Total)
500mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
Gate to Gate
±50V
MONOLITHIC DUAL
N-CHANNEL JFET
U SERIES
TO-71
BOTTOM VIEW
G1 3
D1 2
S1 1
5 S2
6 D2
7 G2
SST SERIES
SOIC
S1 1
D1 2
G1 3
NC 4
8 NC
7 G2
6 D2
5 S2
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
VGS1 VGS2
Differential Gate to
Source Cutoff Voltage
U/SST440
U/SST441
10
20
VGS1 VGS2
T
IDSS1
IDSS2
gfs1
gfs2
Differential Gate to Source Cutoff
Voltage Change with Temperature
Gate to Source Saturation Current Ratio
Forward Transconductance Ratio2
20
0.07
0.97
CMRR
Common Mode Rejection Ratio
85
UNITS
mV
µV/°C
dB
CONDITIONS
VDG = 10V, ID = 5mA
VDG = 10V, ID = 5mA
TA = -55 to +125°C
VDS = 10V, VGS = 0V
VDS = 10V, ID = 5mA, f = 1kHz
VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
BVGSS
VGS(off)
IDSS
IGSS
IG
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current3
Gate Leakage Current
Gate Operating Current
-25
-1 -3.5 -6
6 15 30
-1 -500
-1 -500
UNITS
V
V
mA
pA
CONDITIONS
IG = -1µA, VDS = 0V
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 10V, ID = 5mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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