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U430 の電気的特性と機能

U430のメーカーはVishay Siliconixです、この部品の機能は「Matched N-Channel Pairs」です。


製品の詳細 ( Datasheet PDF )

部品番号 U430
部品説明 Matched N-Channel Pairs
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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U430 Datasheet, U430 PDF,ピン配置, 機能
Matched N-Channel Pairs
U430/431
Vishay Siliconix
PRODUCT SUMMARY
Part Number
U430
U431
VGS(off) (V)
–1 to –4
–2 to –6
V(BR)GSS Min (V)
–25
–25
gfs Min (mS)
10
10
IG Typ (pA)
–15
–15
jVGS1 – VGS2j Typ (mV)
25
25
FEATURES
D Two-Chip Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 15 pA
D Low Noise
D High CMRR: 75 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
APPLICATIONS
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
DESCRIPTION
The U430/431 are matched JFET pairs assembled in a TO-78
package. These devices offer good power gain even at
frequencies beyond 250 MHz.
The TO-78 package is available with full military processing
(see Military Information).
For similar products, see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-78
S1
1
G1 2
S2
7
6 G2
35
D1 4 D2
Case
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70249
S-04031—Rev. E, 04-Jun-01
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
www.vishay.com
8-1

1 Page





U430 pdf, ピン配列
U430/431
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
100
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
80
50
40
10 nA
1 nA
Gate Leakage Current
TA = 125_C
200 mA
IG @ ID = 10 mA
60
gfs
40 IDSS
20
30
100 pA
IGSS @ 125_C
200 mA
20 10 pA
10 mA
TA = 25_C
10 1 pA
IGSS @ 25_C
0
0
1 2 3 4
VGS(off) Gate-Source Cutoff Voltage (V)
0
5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
100 300
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
80 240
60 180
40
gos
20
120
rDS
60
0.1 pA
0
3 4 9 12
VDG Drain-Gate Voltage (V)
15
Common-Source Forward Transconductance
vs. Drain Current
20
VGS(off) = 3 V
VDS = 10 V
f = 1 kHz
16
TA = 55_C
12
25_C
8
125_C
4
00
0 1 2 3 4 5
VGS(off) Gate-Source Cutoff Voltage (V)
Transconductance vs. Gate-Source Voltage
30
VGS(off) = 1.5 V
VDS = 10 V
f = 1 kHz
24 TA = 55_C
25_C
18
125_C
12
6
0
0.1
1
ID Drain Current (mA)
10
Transconductance vs. Gate-Source Voltage
50
VGS(off) = 3 V
40
VDS = 10 V
f = 1 kHz
TA = 55_C
30
25_C
20
125_C
10
0
0
0.4
0.8
1.2
1.6
VGS Gate-Source Voltage (V)
Document Number: 70249
S-04031Rev. E, 04-Jun-01
2
0
0
0.6
1.2
1.8
2.4
3
VGS Gate-Source Voltage (V)
www.vishay.com
8-3


3Pages


U430 電子部品, 半導体
U430/431
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance vs. Frequency
10
VDG = 10 V
ID = 10 mA
CommonGate
1
brg
+grg
0.1 grg
Output Admittance vs. Frequency
100
VDG = 10 V
ID = 10 mA
CommonGate
bog
10
gog
1
0.01
100
200 500
f Frequency (MHz)
1000
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 10 V
16
ID = 1 mA
12
8
4
0
10
ID = 10 mA
100 1 k 10 k
f Frequency (Hz)
100 k
0.1
100
200 500
f Frequency (MHz)
1000
Output Conductance vs. Drain Current
150
VGS(off) = 3 V
120
VDS = 10 V
f = 1 kHz
90
60
30
0
0.1
TA = 55_C
25_C
125_C
1
ID Drain Current (mA)
10
www.vishay.com
8-6
Document Number: 70249
S-04031Rev. E, 04-Jun-01

6 Page



ページ 合計 : 6 ページ
 
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共有リンク

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