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US1GのメーカーはNXP Semiconductorsです、この部品の機能は「SMA ultra fast low-loss controlled avalanche rectifiers」です。 |
部品番号 | US1G |
| |
部品説明 | SMA ultra fast low-loss controlled avalanche rectifiers | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとUS1Gダウンロード(pdfファイル)リンクがあります。 Total 12 pages
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
US1 series
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
2000 Feb 14
1 Page Philips Semiconductors
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
US1 series
SYMBOL
PARAMETER
IFSM non-repetitive peak forward current
Tstg storage temperature
Tj junction temperature
CONDITIONS
t = 8.3 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
See Fig.3
MIN. MAX. UNIT
− 25 A
−65 +175 °C
−65 +175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF forward voltage
US1A to US1G
IF = 1 A;
see Fig.4
US1J
see Fig.5
IR reverse current
VR = VRRMmax; see Figs 6 and 7
VR = VRRMmax; Tj = 165 °C; see Figs 6 and 7
trr
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.12
Cd diode capacitance VR = 4 V; f = 1 MHz;
US1A to US1G
see Fig.8
US1J
see Fig.9
TYP. MAX. UNIT
− 1.1 V
− 1.4 V
− 10 µA
− 50 µA
− 50 ns
14 −
10 −
pF
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point; see Fig.10
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
27
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
3
3Pages Philips Semiconductors
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
US1 series
102
handbook, halfpage
Zth j-tp
(K/W)
10
MBL120
1
1
10 102 103 tp (ms) 104
50
4.5
2.5
50
1.25
MSB213
Fig.10 Transient thermal impedance as a function
of pulse width.
Dimensions in mm.
Material: Al2O3 or epoxy-glass.
Fig.11 Printed-circuit board for surface mounting.
handbook, full pagewidth
DUT
10 Ω
+
25 V
50 Ω
1Ω
IF
(A)
0.5
0
0.25
0.5
IR
(A)
1.0
t rr
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
2000 Feb 14
6
6 Page | |||
ページ | 合計 : 12 ページ | ||
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PDF ダウンロード | [ US1G データシート.PDF ] |
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