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PDF UPF1N100 Data sheet ( Hoja de datos )
| Número de pieza | UPF1N100 | |
| Descripción | SURFACE MOUNT N . CHANNEL MOSFET | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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580 Pleasant Street
Watertown, MA 02472
Phone:(617) 926-0404
F A X : (617) 924-1235
Features
• Rugged POWERMITE 3 Surface Mount Package
• Low On-State Resistance
• Avalanche and Surge Rated
• High Frequency Switching
• Ultra Low Leakage current
• UIS rated
• Available with Lot Acceptance Testing
Description
This device is an N-Channel enhancement mode, high density MOSFET.
It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three
leaded package.
UPF1N100
SURFACE MOUNT
N – CHANNEL
MOSFET
Maximum Ratings
PARAMETER
SYMBOL VALUE
Drain-to-Source Voltage
VDSS
1000
Gate- to -Source Voltage
VGS +/- 20
Continuous Drain Current @ TC = 25°C
ID1 1.0
Continuous Drain Current @ TC=100°C
ID2 0.27
Avalanche Current
IAR 1.0
Repetitive Avalanche Energy
EAR 3.5
Single Pulse Avalanche Energy
EAS 120
Operating & Storage Junction Temperature Range TJ, TSTG - 40 to +125
Steady-state Thermal Resistance, Junction-to-Tab RθJ-TAB
2.5
UNIT
Volts
Volts
Amps
Amps
Amps
mJ
mJ
°C
°C/Watt
Static Electrical Characteristics
SYMBOL
CHARACTERISTICS / TEST CONDITIONS
BVDSS
VGS(TH)2
VGS(TH)1
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Gate Threshold Voltage
(VGS=0V, ID=0.25mA)
(VGS=VDS, ID=1mA, TJ=37°C )
(VGS=VDS, ID=1mA, TJ=25°C )
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
Drain to Source ON-State Resistance (VGS=10V, ID=ID 1 , TJ=25°C )
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=37°C)
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=25°C)
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=60°C)
RDS(ON)5
IDSS1
IDSS2
IGSS1
Drain to Source ON-State Resistance (VGS=7V, ID=ID 1 , TJ=125°C )
Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ= 25°C )
Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ=125°C )
Gate to Source Leakage Current (VGS= ±20V, VDS=0V, TJ = 25°C )
IGSS2 Gate to Source Leakage Current
IGSS3 Gate to Source Leakage Current
(VGS= ±20V, VDS=0V, TJ = 37°C )
(VGS= ±20V, VDS=0V, TJ=125°C )
MIN
1000
2
TYP
3.4
3.5
12.5
12.5
11.5
15.0
25.5
10.0
MAX UNIT
Volts
Volts
4.5 Volts
13.5 Ohms
Ohms
Ohms
Ohms
Ohms
25 uA
250 uA
±100 nA
nA
25 uA
MSC 04-28-00
PRELIMINARY
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UPF1N100.PDF ] | |
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