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VN10KのメーカーはSupertex Incです、この部品の機能は「N-Channel Enhancement-Mode Vertical DMOS FETs」です。 |
部品番号 | VN10K |
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部品説明 | N-Channel Enhancement-Mode Vertical DMOS FETs | ||
メーカ | Supertex Inc | ||
ロゴ | |||
このページの下部にプレビューとVN10Kダウンロード(pdfファイル)リンクがあります。 Total 4 pages
VN10K
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Standard Commercial Devices
BVDSS /
BVDGS
60V
RDS(ON)
(max)
5.0Ω
ID(ON)
(min)
0.75A
Order Number / Package
TO-92
VN10KN3
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 30V
-55°C to +150°C
300°C
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
SGD
TO-92
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex prod1ucts, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1 Page Typical Performance Curves
Output Characteristics
1.0
0.8
0.6
0.4
0.2
0
0
VGS =10V
6V
5V
4V
3V
2V
10 20 30 40 50
VDS (volts)
Transconductance vs. Drain Current
250
200
150
100 VDS = 10V
300µs, 2%
Duty Cycle
50 Pulse Test
0
0 200 400 600 800 1000
ID (mA)
Maximum Rated Safe Operating Area
10
TC = 25°C
1.0
TO-92 (DC)
0.1
0.01
1
10 100
VDS (volts)
1000
3
VN10K
Saturation Characteristics
1.0
VGS =10V
9V
0.8
8V
7V
6V
0.6
5V
0.4
0.2
0
0
4V
3V
2V
2 4 6 8 10
VDS (volts)
Power Dissipation vs. Case Temperature
2
TO-92
1
0
0 25 50 75 100 125 150
TC (°C)
Switching Waveform
10
5
0
15
10
5
0
0 10 20 30 40 50
t – Time(ns)
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ VN10K データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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VN10K | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |