|
|
VN0606LのメーカーはVishay Telefunkenです、この部品の機能は「N-Channel 60-V (D-S) MOSFETs」です。 |
部品番号 | VN0606L |
| |
部品説明 | N-Channel 60-V (D-S) MOSFETs | ||
メーカ | Vishay Telefunken | ||
ロゴ | |||
このページの下部にプレビューとVN0606Lダウンロード(pdfファイル)リンクがあります。 Total 4 pages
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN0601L
VN0606L
VN66AFD
V(BR)DSS Min (V)
60
rDS(on) Max (W)
1.8 @ VGS = 10 V
3 @ VGS = 10 V
3 @ VGS = 10 V
VGS(th) (V)
0.5 to 2
0.8 to 2
0.8 to 2.5
www.DataSheet4U.com
FEATURES
D Low On-Resistance: 1.2 W
D Low Threshold: <1.6 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
ID (A)
0.47
0.33
1.46
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
S1
G2
D3
Top View
TN0601L
VN0606L
Device Marking
Front View
TN0601L
“S” TN
0601L
xxyy
VN0606L
“S” VN
0606L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-220SD
(Tab Drain)
S1
G2
D3
Top View
VN66AFD
Device Marking
Front View
VN66AFD
VN66AFD
“S” xxyy
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0601L
VN0606L
VN66AFDb
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ, Tstg
60
"20
0.47
0.29
1.5
0.8
0.32
156
60
"30
0.33
0.21
1.6
0.8
0.32
156
–55 to 150
60
"30
1.46
0.92
3
15
6
8.3
Unit
V
A
W
_C/W
_C
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-1
1 Page TN0601L, VN0606L, VN66AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0
8V
VGS = 10 V
7V
1.6
6V
1.2
Output Characteristics for Low Gate Drive
100
VGS = 10 V
2.8 V
80
2.6 V
60
0.8
www.DataSheet4U.com
0.4
5V
4V
3V
0
0
1.0
123 4
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
TJ = –55_C
25_C
5
0.8 VDS = 15 V
0.6
125_C
40 2.4 V
2.2 V
20
2.0 V
1.8 V
0
0 0.4 0.8 1.2 1.6 2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.8
1.0 A
2.4
2.0 0.5 A
1.6
1.2
0.4
0.8 ID = 0.1 A
0.2
0.4
0
0 2 4 6 8 10
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2.5
2.0
1.5 VGS = 10 V
0
0
2.25
2.00
1.75
1.50
4 8 12 16
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
VGS = 10 V
I D = 1.0 A
20
0.2 A
1.0 1.25
1.00
0.5
0.75
0
0 0.4 0.8 1.2 1.6 2.0
ID – Drain Current (A)
0.50
–50
–10 30
70 110
TJ – Junction Temperature (_C)
150
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-3
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ VN0606L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
VN0606 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
VN0606L | N-Channel 60-V (D-S) MOSFETs | Vishay Telefunken |
VN0606M | N-Channel Enhancement Mode MOSFET Transistors | Siliconix |
VN0606N | N-Channel Enhancement Mode MOSFET Transistors | Siliconix |