DataSheet.jp

PDF Z0103MA Data sheet ( 特性 )

部品番号 Z0103MA
部品説明 4Q Triac
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 

このページの下部にプレビューとZ0103MAダウンロード(pdfファイル)リンクがあります。

Total 13 pages

No Preview Available !

Z0103MA Datasheet, Z0103MA PDF,ピン配置, 機能
Z0103MA
4Q Triac
6 May 2015
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 (TO-92) plastic
package intended for use in applications requiring direct interfacing to logic ICs and low
power gate drivers.
2. Features and benefits
Direct interfacing to logic level ICs
Direct interfacing to low power gate drive circuits
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Very sensitive gate in four quadrants
3. Applications
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 8A
- - 1A
- - 3 mA
- - 3 mA
Scan or click this QR code to view the latest information for this product

1 Page





Z0103MA pdf, ピン配列
NXP Semiconductors
Z0103MA
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IG = 6 mA; T2+ G+
IG = 6 mA; T2+ G-
IG = 10 mA; T2- G+
IG = 6 mA; T2- G-
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
1 .2
IT(RMS )
(A)
0 .8
003aac264
16
IT(RMS)
(A)
12
8
0 .4
4
Min Max Unit
- 600 V
- 1A
- 8A
- 8.5 A
- 0.32 A2s
- 50 A/µs
- 50 A/µs
- 20 A/µs
- 50 A/µs
- 1A
- 2W
- 0.1 W
-40 150 °C
- 125 °C
003a a f977
0
-50 0 50 100 150
Tle a d (°C )
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tlead = 45 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Z0103MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 13


3Pages


Z0103MA 電子部品, 半導体
NXP Semiconductors
Z0103MA
4Q Triac
8. Thermal characteristics
Table 5.
Symbol
Rth(j-lead)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to lead
thermal resistance
from junction to
ambient
Conditions
full cycle; Fig. 6
full cycle; printed circuit board mounted;
lead length = 4 mm
102
Zth(j-lead)
(K/W)
10
Min Typ Max Unit
- - 60 K/W
- 150 - K/W
003aac206
1
10-1
P
10-2
10-5
10-4
10-3
10-2
10-1
tp t
1 tp (s)
10
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
Z0103MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
6 / 13

6 Page



ページ 合計 : 13 ページ
 
PDF
ダウンロード
[ Z0103MA.PDF ]


共有リンク

Link :


おすすめデータシート

部品番号部品説明メーカ
Z0103MA

4Q Triac

NXP Semiconductors
NXP Semiconductors
Z0103MA

Standard 1A Triacs

STMicroelectronics
STMicroelectronics
Z0103MA

Silicon Bidirectional Thyristors

ON Semiconductor
ON Semiconductor
Z0103MA0

4Q Triac Direct interfacing to logic level ICs

NXP Semiconductors
NXP Semiconductors


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap