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Datasheet YG225N2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | YG225N2 | Fast Recovery Diode, Rectifier, YG225C2,N2,D2 (10A)
FAST RECOVERY DIODE
10±0.5 ø3.2
+0.2 -0.1
(200V / 10A)
Outline drawings, mm
4.5±0.2 2.7±0.2
6.3 2.7±0.2 3.7±0.2
1.2±0.2
13Min
15±0.3
Features
Insulated package by fully molding High voltage by mesa design High reliability JEDEC EIAJ
0.7±0.2 2.54±0.2
0.6 -0
+0.2
|  ETC | diode |
YG2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | YG2025 | 2-channel audio power amplifier YG2025
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YG2025 Ë«ÉùµÀÒôƹ¦ÂÊ·Å´ó¼¯³Éµç ¸Ãµç· ÄÌØ ãÈ Ï ¹¤×÷µçÔ´ Ñ ·¶Î§ ª ÆäÊ ³ö¹¦Â ÓÉ ÃµçÔ´ Ñ ºÍ¸ ضø ¨ P=0.1W 2 P=1W 2 P=2.3W 2 Ê Óà ڵ¥Éù ETC amplifier | | |
| 2 | YG225C2 | Fast Recovery Diode, Rectifier, YG225C2,N2,D2 (10A)
FAST RECOVERY DIODE
10±0.5 ø3.2
+0.2 -0.1
(200V / 10A)
Outline drawings, mm
4.5±0.2 2.7±0.2
6.3 2.7±0.2 3.7±0.2
1.2±0.2
13Min
15±0.3
Features
Insulated package by fully molding High voltage by mesa design High reliability JEDEC EIAJ
0.7±0.2 2.54±0.2
0.6 -0
+0.2
ETC diode | | |
| 3 | YG225D2 | Fast Recovery Diode, Rectifier, YG225C2,N2,D2 (10A)
FAST RECOVERY DIODE
10±0.5 ø3.2
+0.2 -0.1
(200V / 10A)
Outline drawings, mm
4.5±0.2 2.7±0.2
6.3 2.7±0.2 3.7±0.2
1.2±0.2
13Min
15±0.3
Features
Insulated package by fully molding High voltage by mesa design High reliability JEDEC EIAJ
0.7±0.2 2.54±0.2
0.6 -0
+0.2
ETC diode | | |
| 4 | YG225N2 | Fast Recovery Diode, Rectifier, YG225C2,N2,D2 (10A)
FAST RECOVERY DIODE
10±0.5 ø3.2
+0.2 -0.1
(200V / 10A)
Outline drawings, mm
4.5±0.2 2.7±0.2
6.3 2.7±0.2 3.7±0.2
1.2±0.2
13Min
15±0.3
Features
Insulated package by fully molding High voltage by mesa design High reliability JEDEC EIAJ
0.7±0.2 2.54±0.2
0.6 -0
+0.2
ETC diode | | |
| 5 | YG226S8 | Fast Recovery Diode, Rectifier, YG226S8 (5A)
FAST RECOVERY DIODE
10.5±0.5 ø3.2 -0.1
+0.2
(800V / 5A)
Outline drawings, mm
4.5±0.2 2.7±0.2
6.3 2.7±0.2
1
3
3.7±0.2
1.2±0.2
13Min
Features
5.08±0.4
0.7±0.2
15±0.3
0.6±0.2 2.7±0.2
Insulated package by fully molding High voltage by mesa design H ETC diode | |
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