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PDF XN2531 Data sheet ( 特性 )

部品番号 XN2531
部品説明 Silicon NPN epitaxial planer transistor
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 

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XN2531 Datasheet, XN2531 PDF,ピン配置, 機能
Composite Transistors
XN2531
Silicon NPN epitaxial planer transistor
For high frequency, oscillation and mixing
s Features
q Two elements incorporated into one package.
(Base-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SC3130 × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
15
10
3
50
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Emitter (Tr2)
4 : Base
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 9I
Internal Connection
Tr1
5
1
4
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
hFE2/hFE1 ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Collector to base parameter
Common base reverse transfer capacitance
*1 Ratio between 2 elements
VCEO
VEBO
ICBO
ICEO
hFE1
hFE (small/large)*1
hFE2/hFE1
VCE(sat)
Cob
fT
rbb'·CC
Crb
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = 0
VCE = 10V, IB = 0
VCE = 4V, IC = 5mA
VCE = 4V, IC = 5mA
VCE = 4V, IC = 100µA
VCE = 4V, IC = 5mA
IC = 20mA, IB = 4mA
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = –5mA, f = 200MHz
VCB = 4V, IE = –5mA, f = 30MHz
VCB = 4V, IE = 0, f = 1MHz
3
min
10
3
75
0.5
0.75
1.4
2
Tr2
typ max Unit
V
V
1 µA
10 µA
200 400
0.99
1.6
0.5 V
0.9 1.1 pF
1.9 2.5 GHz
11.8 13.5
ps
0.25 0.35
pF
1

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