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PDF XN2401 Data sheet ( 特性 )

部品番号 XN2401
部品説明 Silicon PNP epitaxial planer transistor
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 

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XN2401 Datasheet, XN2401 PDF,ピン配置, 機能
Composite Transistors
XN2401
Silicon PNP epitaxial planer transistor
For general amplification
s Features
q Two elements incorporated into one package.
(Base-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SB709A × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
–60
–50
–7
–100
–200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Emitter (Tr2)
4 : Base
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 7R
Internal Connection
Tr1
5
1
4
32
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1 Ratio between 2 elements
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
hFE (small/large)*1
VCE(sat)
fT
Cob
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
VCE = –10V, IB = 0
VCE = –10V, IC = –2mA
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–60
–50
–7
160
0.5
typ
0.99
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
1

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