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PDF XN2211 Data sheet ( 特性 )

部品番号 XN2211
部品説明 Silicon NPN epitaxial planer transistor
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 

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XN2211 Datasheet, XN2211 PDF,ピン配置, 機能
Composite Transistors
XN2211
Silicon NPN epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Base-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q UN1211 × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating
of
element
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Emitter (Tr2)
4 : Base
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 9O
Internal Connection
Tr1
5
1
4
3
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
*1 Ratio between 2 elements
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE (small/large)*1
VCE(sat)
VOH
VOL
fT
R1
R1/R2
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1k
VCC = 5V, VB = 2.5V, RL = 1k
VCB = 10V, IE = –2mA, f = 200MHz
min
50
50
35
0.5
4.9
–30%
0.8
2
Tr2
typ max Unit
V
V
0.1 µA
0.5 µA
0.5 mA
0.99
0.25 V
V
0.2 V
150 MHz
10 +30% k
1.0 1.2
1

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