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PDF IRFIZ24N Data sheet ( 特性 )

部品番号 IRFIZ24N
部品説明 Power MOSFET(Vdss=55V/ Rds(on)=0.07ohm/ Id=14A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 

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IRFIZ24N Datasheet, IRFIZ24N PDF,ピン配置, 機能
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 9.1501A
IRFIZ24N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.07
ID = 14A
S
TO-220 FULLPAK
Max.
14
10
68
29
0.19
± 20
71
10
2.9
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
5.2
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97

1 Page





IRFIZ24N pdf, ピン配列
IRFIZ24N
100 VGS
TOP 15V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
BOTT OM 4.5V
100 VGS
TOP 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
BOTT OM 4.5V
10
4 .5V
20µs PULSE W IDTH
1
TTCJ= 2 5°C
A
0.1 1 10 100
VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
4 .5V
20µs P ULSE WIDTH
1
TTCJ= 17 5°C
A
0.1 1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 2 5 ° C
TJ = 175°C
10
V DS= 25V
20µs P ULSE W ID TH
1A
4 5 6 7 8 9 10
VGS , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
3.0
ID = 17A
2.5
2.0
1.5
1.0
0.5
0.0
V GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRFIZ24N 電子部品, 半導体
IRFIZ24N
VDS
RG
5.0 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
140
ID
TO P 4.2A
120 7.2A
BOT TO M 10A
100
80
60
40
20
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

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