DataSheet.jp

IRFI9634G の電気的特性と機能

IRFI9634GのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-250V/ Rds(on)=1.0ohm/ Id=-4.1A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFI9634G
部品説明 Power MOSFET(Vdss=-250V/ Rds(on)=1.0ohm/ Id=-4.1A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFI9634Gダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRFI9634G Datasheet, IRFI9634G PDF,ピン配置, 機能
PRELIMINARY
l Advanced Process Technology
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.Third Generation HEXFETs from
International Rectifier provide the designer with the
best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 9.1488
IRFI9634G
HEXFET® Power MOSFET
D VDSS = -250V
RDS(on) = 1.0
ID = -4.1A
S
TO-220 FULLPAK
Max.
-4.1
-2.6
-16
35
0.28
± 20
520
-4.1
3.5
-5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
3.6
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/8/96

1 Page





IRFI9634G pdf, ピン配列
1 0 0 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
IRFI9634G
100 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
20µs PU LSE W ID TH
1
-4.5V
Tc = 25°C
A
1 10 100
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics,
TJ = 25oC
-4.5V 20µs PULSE W IDTH
1
TC = 150°C
A
1 10 100
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics,
TJ = 150oC
100
TJ = 25°C
10
TJ= 150°C
VDS = -50V
20µs PULSE W IDTH
1
4
5
6
7
8
9 10 A
-VG S , Ga te -to-S ource V olta ge (V )
Fig 3. Typical Transfer Characteristics
2.5
ID = -4.1A
2.0
1.5
1.0
0.5
0.0
-60
VG S = -10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRFI9634G 電子部品, 半導体
IRFI9634G
VDS L
RG
-20V
tp
D.U .T
IA S
0.01
D R IV E R
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
600
ID
TO P
- 4 .1 A
-5.2A
500 BOTTOM -8.2A
400
300
200
100
0A
25 50 75 100 125 150
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRFI9634G データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFI9634G

Power MOSFET(Vdss=-250V/ Rds(on)=1.0ohm/ Id=-4.1A)

International Rectifier
International Rectifier
IRFI9634GPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap