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IRFI9634GのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=-250V/ Rds(on)=1.0ohm/ Id=-4.1A)」です。 |
部品番号 | IRFI9634G |
| |
部品説明 | Power MOSFET(Vdss=-250V/ Rds(on)=1.0ohm/ Id=-4.1A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFI9634Gダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PRELIMINARY
l Advanced Process Technology
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.Third Generation HEXFETs from
International Rectifier provide the designer with the
best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 9.1488
IRFI9634G
HEXFET® Power MOSFET
D VDSS = -250V
RDS(on) = 1.0Ω
ID = -4.1A
S
TO-220 FULLPAK
Max.
-4.1
-2.6
-16
35
0.28
± 20
520
-4.1
3.5
-5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
3.6
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/8/96
1 Page 1 0 0 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
IRFI9634G
100 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
20µs PU LSE W ID TH
1
-4.5V
Tc = 25°C
A
1 10 100
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics,
TJ = 25oC
-4.5V 20µs PULSE W IDTH
1
TC = 150°C
A
1 10 100
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics,
TJ = 150oC
100
TJ = 25°C
10
TJ= 150°C
VDS = -50V
20µs PULSE W IDTH
1
4
5
6
7
8
9 10 A
-VG S , Ga te -to-S ource V olta ge (V )
Fig 3. Typical Transfer Characteristics
2.5
ID = -4.1A
2.0
1.5
1.0
0.5
0.0
-60
VG S = -10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRFI9634G
VDS L
RG
-20V
tp
D.U .T
IA S
0.01Ω
D R IV E R
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
600
ID
TO P
- 4 .1 A
-5.2A
500 BOTTOM -8.2A
400
300
200
100
0A
25 50 75 100 125 150
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFI9634G | Power MOSFET(Vdss=-250V/ Rds(on)=1.0ohm/ Id=-4.1A) | International Rectifier |
IRFI9634GPBF | Power MOSFET ( Transistor ) | International Rectifier |