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IRFI830 の電気的特性と機能

IRFI830のメーカーはFairchild Semiconductorです、この部品の機能は「500V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFI830
部品説明 500V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRFI830 Datasheet, IRFI830 PDF,ピン配置, 機能
November 2001
IRFW830B / IRFI830B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 4.5A, 500V, RDS(on) = 1.5@VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
!
GS
D2-PAK
IRFW Series
GDS
I2-PAK
IRFI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
◀▲
!
S
IRFW830B / IRFI830B
500
4.5
2.9
18
± 30
270
4.5
7.3
5.5
3.13
73
0.58
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 1.71 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

1 Page





IRFI830 pdf, ピン配列
Typical Characteristics
Top :
101
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom: 5.0 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
6
5
VGS = 10V
4
VGS = 20V
3
2
Note : T = 25
J
1
0 3 6 9 12 15
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1800
1500
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
1200
900
600
300
Ciss
Coss
C
rss
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
V25G0Sμ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
10 DS
V = 250V
DS
8 V = 400V
DS
6
4
2
Note : I = 4.5 A
D
0
0 4 8 12 16 20 24 28
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, November 2001


3Pages


IRFI830 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

6 Page



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共有リンク

Link :


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IRFI830

500V N-Channel MOSFET

Fairchild Semiconductor
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