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IRFI640BのメーカーはFairchild Semiconductorです、この部品の機能は「200V N-Channel MOSFET」です。 |
部品番号 | IRFI640B |
| |
部品説明 | 200V N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとIRFI640Bダウンロード(pdfファイル)リンクがあります。 Total 9 pages
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
• 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
DD
!
GS
D2-PAK
IRFW Series
GDS
I2-PAK
IRFI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
●
◀▲
●
●
!
S
IRFW640B / IRFI640B
200
18
11.4
72
± 30
250
18
13.9
5.5
3.13
139
1.11
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max
-- 0.9
-- 40
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
1 Page Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V
5.5 V
Bottom: 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.8 V = 10V
GS
0.6
V = 20V
GS
0.4
0.2
※ Note : T = 25℃
J
0.0
0 10 20 30 40 50 60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100 25oC
10-1
2
-55oC
※ Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 40V
DS
10 V = 100V
DS
VDS = 160V
8
6
4
2
※ Note : ID = 18 A
0
0 5 10 15 20 25 30 35 40 45 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRFI640B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFI640 | 200V N-Channel MOSFET | Fairchild Semiconductor |
IRFI640A | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRFI640B | 200V N-Channel MOSFET | Fairchild Semiconductor |
IRFI640B | N-Channel MOSFET | Fairchild Semiconductor |