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IRFI520NのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A)」です。 |
部品番号 | IRFI520N |
| |
部品説明 | Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFI520Nダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 9.1362A
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
PRELIMINARY
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
D
S
IRFI520N
VDSS = 100V
RDS(on) = 0.20Ω
ID = 7.6A
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
TO-220 FULLPAK
Max.
7.6
5.3
38
30
0.20
±20
91
5.7
3.0
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
Typ.
––––
––––
Max.
5.0
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
3/16/98
1 Page 100 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE W IDTH
1
TC = 25°C
A
0.1 1
10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 25°C
TJ = 1 7 5 °C
10
V DS= 50V
20µs PU LSE W ID TH
1A
4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
IRFI520N
4.5V
20µs PULSE W IDTH
1
TC = 175°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
ID = 9.5A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRFI520N
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
200
ID
TOP 2.3A
4.0A
160 BOTTOM 5.7A
120
80
40
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
+
D.U.T. -VDS
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFI520N データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFI520A | Advanced Power MOSFET | Fairchild Semiconductor |
IRFI520G | HEXFET POWER MOSFET | International Rectifier |
IRFI520GPBF | HEXFET Power MOSFET | International Rectifier |
IRFI520N | Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A) | International Rectifier |