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IRFI1310N の電気的特性と機能

IRFI1310NのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFI1310N
部品説明 Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFI1310N Datasheet, IRFI1310N PDF,ピン配置, 機能
PRELIMINARY
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dtĠ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 9.1611A
IRFI1310N
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.036
ID = 24A
S
TO-220 FULLPAK
Max.
24
17
140
56
0.37
± 20
420
22
5.6
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
2.7
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
3/16/98

1 Page





IRFI1310N pdf, ピン配列
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRFI1310N
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20us PULSE WIDTH
TJ = 25 oC
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 4.5V
20us PULSE WIDTH
TJ = 175 oC
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100 TJ = 25 oC
TJ = 175 oC
10
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0 ID = 36A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (o C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRFI1310N 電子部品, 半導体
IRFI1310N
1000
15V
800
TOP
BOTTOM
ID
9.0A
16A
22A
VDS
L
D R IV E R
600
RG
20V
tp
D .U .T
IA S
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature o( C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page



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共有リンク

Link :


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