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IRFI1310G の電気的特性と機能

IRFI1310GのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFI1310G
部品説明 Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFI1310G Datasheet, IRFI1310G PDF,ピン配置, 機能
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HEXFET® Power MOSFET
PD - 9.1222
IRFI1310G
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Repetitive Avalanche Rated
175°C Operating Temperature
VDSS = 100V
RDS(on) = 0.04
ID = 22A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a high
isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Collector Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
22
15
88
48
0.32
±20
120
22
4.8
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Min.
––––
Typ.
––––
––––
Max.
3.1
––––
Units
°C/W
65
To Order
Revision 0

1 Page





IRFI1310G pdf, ピン配列
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1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
IRFI1310G
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
20µs PULSE WIDTH
1 TC = 25°C
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TC = 25oC
1000
TJ = 25°C
100
TJ = 1 7 5°C
10
V DS = 50V
20µs PULSE WID TH
1
4 5 6 7 8 9 10
VGS , Gate-to-Source V oltage (V)
Fig 3. Typical Transfer Characteristics
1 0 4.5V
20µs PULSE WIDTH
1 TC = 175°C
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics,
TC = 175oC
3.0
ID = 25A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-6 0 -4 0 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
To Order


3Pages


IRFI1310G 電子部品, 半導体
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Index
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IRFI1310G
10 V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
300
ID
TOP
5.3A
9.2A
250 BOTTOM 13A
200
150
100
50
VDD = 25V
0
25 50
75
100 125
150 175
Starting TJ , Juntion Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit
Appendix B: Package Outline Mechanical Drawing
Appendix C: Part Marking Information
To Order

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共有リンク

Link :


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