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IRFI1010のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)」です。 |
部品番号 | IRFI1010 |
| |
部品説明 | Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFI1010ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.012Ω
ID = 49A
S
TO-220 FULLPAK
Max.
49
35
290
58
0.38
± 20
360
43
5.8
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
2.6
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
1 Page 1000
TOP
BOTT OM
VGS
15 V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
4.5 V
100
IRFI1010N
1000
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
100
10
0.1
4.5V 20µs PULSE W IDTH
TC = 2 5°C
A
1 10 100
VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
4 .5V
10
0.1
20µs P ULSE WIDTH
TC = 17 5°C
A
1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
1 0 0 TJ = 1 7 5 ° C
10
V DS= 25V
20µs P ULSE W ID TH
1A
4 5 6 7 8 9 10
VGS , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
3.0
ID = 72A
2.5
2.0
1.5
1.0
0.5
0.0
V GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRFI1010N
15 V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS
tp
I AS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
1000
ID
TOP
18A
31A
800 BOTTOM 43A
600
400
200
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFI1010 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFI1010 | Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A) | International Rectifier |
IRFI1010N | Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A) | International Rectifier |
IRFI1010NPBF | Power MOSFET ( Transistor ) | International Rectifier |