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IRFG9110 の電気的特性と機能

IRFG9110のメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET THRU-HOLE (MO-036AB)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFG9110
部品説明 POWER MOSFET THRU-HOLE (MO-036AB)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFG9110 Datasheet, IRFG9110 PDF,ピン配置, 機能
PD - 90397G
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number RDS(on) ID
IRFG9110 1.4-0.75A
IRFG9110
JANTX2N7335
JANTXV2N7335
REF:MIL-PRF-19500/599
100V, QUAD P-CHANNEL
HEXFET® MOSFETTECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-0.75
-0.5
-3.0
1.4
0.011
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
75
-5.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
1.3 (typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
04/16/02

1 Page





IRFG9110 pdf, ピン配列
IRFG9110
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFG9110 電子部品, 半導体
IRFG9110
VDS
L
RG
--210V
tp
D .U .T
IA S
0 .0 1
D R IV E R
VDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
-1120VV
.2µF
50K
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRFG9110

POWER MOSFET THRU-HOLE (MO-036AB)

International Rectifier
International Rectifier


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