|
|
IRFF9220のメーカーはInternational Rectifierです、この部品の機能は「REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)」です。 |
部品番号 | IRFF9220 |
| |
部品説明 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFF9220ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
PD - 90553C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS
IRFF9220
-200V
RDS(on)
1.5Ω
ID
-2.5A
IRFF9220
JANTX2N6847
JANTXV2N6847
REF:MIL-PRF-19500/563
200V, P-CHANNEL
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-2.5
-1.6 A
-10
20 W
0.16
W/°C
±20 V
180 mJ
—A
— mJ
-5.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01
1 Page IRFF9220
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFF9220
VDS
L
RG
-1200VV
tp
D .U .T
IA S
0 .0 1Ω
D R IV E R
VDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
-1122VV
.2µF
50KΩ
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ IRFF9220 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFF9220 | -2.5A/ -200V/ 1.5 Ohm/ P-Channel Power MOSFETs | Intersil Corporation |
IRFF9220 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier |
IRFF9220 | P-Channel MOSFET | Seme LAB |