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IRFF310のメーカーはInternational Rectifierです、この部品の機能は「HEXFET TRANSISTORS」です。 |
部品番号 | IRFF310 |
| |
部品説明 | HEXFET TRANSISTORS | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFF310ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
PD-90425D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF310
400V 3.6Ω
ID
1.25A
IRFF310
JANTX2N6786
JANTXV2N6786
REF:MIL-PRF-19500/556
400V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.25
0.80
A
5.5
15 W
0.12
W/°C
±20 V
0.82
mJ
1.25
A
1.5 mJ
4.0 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
05/15/15
1 Page IRFF310, JANTX2N6786
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
Fig3. TypicalTransferCharacteristics
www.irf.com
Fig4. NormalizedOn-Resistance
Vs.Temperature
3
3Pages IRFF310, JANTX2N6786
15V
VDS
L
DRIVER
RG
2100VV
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRFF310 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFF310 | 1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
IRFF310 | HEXFET TRANSISTORS | International Rectifier |
IRFF310 | Trans MOSFET N-CH 400V 1.25A 3-Pin TO-39 | New Jersey Semiconductor |