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Número de pieza | IRFF310 | |
Descripción | 1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFF310 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
IRFF310
March 1999 File Number 1888.3
1.35A, 400V, 3.600 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17444.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF310
TO-205AF
IRFF310
NOTE: When ordering, include the entire part number.
Features
• 1.35A, 400V
• rDS(ON) = 3.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page IRFF310
Typical Performance Curves TC = 25oC, Unless Otherwise Specified (Continued)
1.15
ID = 250µA
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
VGS = 0V, f = 1MHz
CISS = CGS + CGD
300 CRSS = CGD
COSS ≈ CDS + CGS
200
CISS
100 COSS
CRSS
0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.4
80µs PULSE TEST
2.0
1.6
1.2
TJ = -55oC
TJ = 25oC
TJ = 125oC
0.8
0.4
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10
TJ = 175oC
1
TJ = 25oC
0.1
0
1 23
4
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
5
20
ID = 4A
15
10
VDS = 160V
VDS = 100V
VDS = 40V
5
0
0 2 4 6 8 10
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRFF310.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFF310 | 1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
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