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IRFF210 の電気的特性と機能

IRFF210のメーカーはInternational Rectifierです、この部品の機能は「TRANSISTORS」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFF210
部品説明 TRANSISTORS
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFF210 Datasheet, IRFF210 PDF,ピン配置, 機能
PD-90424D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF210
200V 1.5
ID
2.25A
IRFF210
JANTX2N6784
JANTXV2N6784
REF:MIL-PRF-19500/556
200V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
Units
2.25
1.50
A
9.0
15 W
0.12
W/°C
±20 V
48 mJ
2.25
A
1.5 mJ
5.0 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
www.irf.com
1
06/03/15

1 Page





IRFF210 pdf, ピン配列
IRFF210, JANTX2N6784
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
Fig3. TypicalTransferCharacteristics
www.irf.com
Fig4. NormalizedOn-Resistance
Vs.Temperature
3


3Pages


IRFF210 電子部品, 半導体
IRFF210, JANTX2N6784
15V
VDS
L
DRIVER
RG
2100VV
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFF210

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