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IRFF130のメーカーはIntersil Corporationです、この部品の機能は「8.0A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET」です。 |
部品番号 | IRFF130 |
| |
部品説明 | 8.0A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとIRFF130ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Data Sheet
IRFF130
March 1999 File Number 1564.3
8.0A, 100V, 0.180 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17411.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF130
TO-205AF
IRFF130
NOTE: When ordering, use the entire part number.
Features
• 8.0A, 100V
• rDS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 Page IRFF130
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
D
MIN TYP MAX UNITS
- - 8.0 A
- - 32 A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = 8.0A, VGS = 0V (Figure 13)
-
-
Reverse Recovery Time
trr TJ = 150oC, ISD = 8.0A, dISD/dt = 100A/µs
- 300
Reverse Recovery Charge
QRR
TJ = 150oC, ISD = 8.0A, dISD/dt = 100A/µs
- 1.5
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 1.62mH, RG = 25Ω, peak IAS = 8.0A (Figures 15, 16).
2.5
-
-
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (S)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1 10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
3Pages IRFF130
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
0V
tP
RG
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORM
RL
+
RG
VDD
-
DUT
VGS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50kΩ
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
IG(REF)
0
S
VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
6
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
0
Qg(TOT)
Qgd
VGS
VDS
IG(REF)
0
FIGURE 20. GATE CHARGE WAVEFORMS
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRFF130 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFF130 | 8.0A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
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