|
|
PDF IRFF120 Data sheet ( Hoja de datos )
| Número de pieza | IRFF120 | |
| Descripción | HEXFET TRANSISTORS | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFF120 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
PD-90426D
IRFF120
JANTX2N6788
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6788
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
100V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF120
100V 0.30Ω
ID
6.0A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
T0-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
6.0
3.5
24
20
0.16
±20
0.242
2.2
2.0
5.5
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
09/03/07
1 page  
IRFF120, JANTX2N6788, JANTXV2N6788
Fig9. MaximumDrainCurrentVs.
CaseTemperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFF120.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFF120 | 6.0A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET |  Intersil Corporation |
| IRFF120 | HEXFET TRANSISTORS | International Rectifier |
| IRFF120 | (IRFF120 - IRFF123) N-Channel Enhancement-Mode Power MOS Field-Effect Transistors |  GE Solid State |
| IRFF120 | Trans MOSFET N-CH 100V 6A 3-Pin TO-39 |  New Jersey Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |