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IRFD9120 の電気的特性と機能

IRFD9120のメーカーはIntersil Corporationです、この部品の機能は「1.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFD9120
部品説明 1.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRFD9120 Datasheet, IRFD9120 PDF,ピン配置, 機能
Data Sheet
IRFD9120
July 1999 File Number 2285.3
1.0A, 100V, 0.6 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17501.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD9120
HEXDIP
IRFD9120
NOTE: When ordering, use the entire part number.
Features
• 1.0A, 100V
• rDS(ON) = 0.6
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-45
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





IRFD9120 pdf, ピン配列
IRFD9120
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
G
MIN TYP MAX UNITS
- - -1.0 A
D
- - -8.0 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -1.0A, VGS = 0V, (Figure 12)
TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width 80µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
4. VDD = 25V, starting TJ = 25oC, L = 555mH, RG = 25Ω, Peak IAS= 1.0A (Figures 14, 15).
Typical Performance Curves Unless Otherwise Specified
- - -1.5 V
- 150
-
ns
- 0.9
-
µC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
-1.0
-0.8
-0.6
-0.4
-0.2
0
25 50
75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
10µs
100µs
1 1ms
10ms
0.1 OPERATION IN THIS AREA
IS LIMITED BY rDS(ON)
100ms
TC = 25oC
0.01 TJ = MAX RATED
SINGLE PULSE
DC
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
-5
VGS = -7V
-4 VGS = -10V
-3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
VGS = -6V
-2
-1
0
0
VGS = -5V
VGS = -4V
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
-50
4-47


3Pages


IRFD9120 電子部品, 半導体
IRFD9120
Test Circuits and Waveforms (Continued)
tON tOFF
td(ON)
td(OFF)
tr tf
0
RL
10%
10%
VGS
DUT
RG
-
VDD
+
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
CURRENT
REGULATOR
-VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50k
0.3µF
DUT
D
G DUT
0
IG(REF)
S
+VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 18. GATE CHARGE TEST CIRCUIT
0
VDS
Qgs
VDD
0
Qgd
Qg(TOT)
VGS
IG(REF)
FIGURE 19. GATE CHARGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
4-50

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共有リンク

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