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PDF IRFD320 Data sheet ( Hoja de datos )
| Número de pieza | IRFD320 | |
| Descripción | 0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRFD320 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Data Sheet
IRFD320
July 1999 File Number 2325.4
0.5A, 400V, 1.800 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17404.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD320
HEXDIP
IRFD320
NOTE: When ordering, use the entire part number.
Features
• 0.5A, 400V
• rDS(ON) = 1.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-299
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFD320
Typical Performance Curves Unless Otherwise Specified (Continued)
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
3
2
TJ = -55oC
TJ = 25oC
TJ = 125oC
1
0
01 2 345 6
I D, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 150oC
TJ = 25oC
TJ = 25oC
TJ = 150oC
1
01 2 3
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
4
20
ID = 0.5A
15 VDS = 80V
VDS = 200V
VDS = 320V
10
5
0
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
tAV
VDS
VDD
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
4-303
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFD320.PDF ] | |
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