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IRFD310のメーカーはIntersil Corporationです、この部品の機能は「0.4A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET」です。 |
部品番号 | IRFD310 |
| |
部品説明 | 0.4A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET | ||
メーカ | Intersil Corporation | ||
ロゴ | |||
このページの下部にプレビューとIRFD310ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Data Sheet
IRFD310
July 1999 File Number 2324.4
0.4A, 400V, 3.600 Ohm, N-Channel
Power MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17444.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD310
HEXDIP
IRFD310
NOTE: When ordering, use the entire part number.
Features
• 0.4A, 400V
• rDS(ON) = 3.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-293
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 Page IRFD310
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
D
MIN TYP MAX UNITS
- - 0.4 A
- - 1.6 A
S
Source to Drain Diode Voltage (Note 2)
VSD TJ = 25oC, ISD = 1.6A, VGS = 0V (Figure 12)
-
- 1.6 V
Reverse Recovery Time
trr TJ = 150oC, ISD = 1.6A, dISD/dt = 100A/µs
- 380 -
ns
Reverse Recovery Charge
QRR
TJ = 150oC, ISD = 1.6A, dISD/dt = 100A/µs
- 2.7 - µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature.
4. VDD = 40V, starting TJ = 25oC, L = 44.89mH, RG = 50Ω, peak IAS = 1.4A.
Typical Performance Curves Unless Otherwise Specified
1.2 0.4
1.0
0.8
0.3
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TA, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
0.1
0
25 50
75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
5
1
0.1
00.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.001
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
10µs
100µs
1ms
10ms
DC
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
2.20
1.76
1.32
VGS = 7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 6V
0.88
0.44
00
VGS = 5V
VGS = 4V
20 40 60 80
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
100
4-295
3Pages IRFD310
Test Circuits and Waveforms (Continued)
RL
+
RG
VDD
-
DUT
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50kΩ
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
IG(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 18. GATE CHARGE TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. GATE CHARGE TEST CIRCUIT
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
IG(REF)
0
FIGURE 19. GATE CHARGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
4-298
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRFD310 | 0.4A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
IRFD310 | Power MOSFET(Vdss=400V/ Rds(on)=3.6ohm/ Id=0.35A) | International Rectifier |